AP30N06 MOS管 60V 场效应管 N沟道 低结电低内阻 PDFN3*3
原创AP30N06 MOS管 60V 场效应管 N沟道 低结电低内阻 PDFN3*3
原创
SW18923706103
发布于 2023-05-11 17:31:28
发布于 2023-05-11 17:31:28
文章被收录于专栏：电源驱动IC
The AP30N06 is the high cell density trenched
N-ch MOSFETs, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The AP30N06 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
原创声明：本文系作者授权腾讯云开发者社区发表，未经许可，不得转载。
如有侵权，请联系 cloudcommunity@tencent.com 删除。
原创声明：本文系作者授权腾讯云开发者社区发表，未经许可，不得转载。
如有侵权，请联系 cloudcommunity@tencent.com 删除。
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